050-7013 rev d 4-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 apt20m20b2ll apt20m20lll 200v 100a 0.020 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max? or to-264 package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 50a) zero gate voltage drain current (v ds = 200v, v gs = 0v) zero gate voltage drain current (v ds = 160v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c 5 pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 200 0.020 100500 100 35 apt20m20b2ll_lll 200100 400 3040 568 4.55 -55 to 150 300100 50 2500 downloaded from: http:///
050-7013 rev d 4-2004 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.250.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 dynamic characteristics apt20m20b2ll_lll characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 100a ) reverse recovery time (i s = -i d 100a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 100a , dl s /dt = 100a/s) peak diode recovery dv / dt 6 unit amps volts ns c v/ns min typ max 100400 1.3 284 3.06 5 symbol r jc r ja min typ max 0.22 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 7 turn-off switching energyturn-on switching energy 7 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 100v i d = 100a @ 25c resistive switching v gs = 15v v dd = 100v i d = 100a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 130v, v gs = 15v i d = 100a, r g = 5 ? inductive switching @ 125c v dd = 130v, v gs = 15v i d = 100a, r g = 5 ? min typ max 68502180 95 110 4347 13 40 26 2 465455 920 915 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 0.50mh, r g = 25 ? , peak i l = 100a 5 the maximum current is limited by lead temperature 6 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 75a di / dt 700a/s v r v dss t j 150 c 7 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. downloaded from: http:///
050-7013 rev d 4-2004 apt20m20b2ll_lll typical performance curves 250200 150 100 50 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 6v 5.5v 7.5v 6.5 v gs =15 &10v 7v 9v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 200180 160 140 120 100 8060 40 20 0 120100 8060 40 20 0 2.52.0 1.5 1.0 0.5 0.0 normalized to v gs = 10v @ i d = 50a i d = 50a v gs = 10v 0.08440.138 0.0124f0.218f power (watts) rc model junction temp. ( c) case temperature downloaded from: http:///
apt20m20b2ll_lll 050-7013 rev d 4-2004 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage 20,00010,000 1,000 100 10 200100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 200 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 0.3 0.5 0.7 0.9 1.1 1.3 1.5 508100 10 1 1612 84 0 10ms 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds =100v v ds =40v v ds =160v i d = 75a t j =+150c t j =+25c c rss c iss c oss i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 130v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 130v r g = 5 ? t j = 125c l = 100h 20 40 60 80 100 120 140 20 40 60 80 100 120 140 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 45 50 9080 70 60 50 40 30 20 10 0 14001200 1000 800600 400 200 0 160140 120 100 8060 40 20 0 25002000 1500 1000 500 0 v dd = 130v i d = 100a t j = 125c l = 100h e on includes diode reverse recovery. v dd = 130v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. downloaded from: http:///
050-7013 rev d 4-2004 apt20m20b2ll_lll typical performance curves 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. i c d.u.t. apt100s20b v ce fi g ure 20 , inductive switchin g test circuit v dd g figure 19, turn-off switching waveforms and definitions figure 18, turn-on switching waveforms and definitions drain current drain voltage gate voltage t j 125c 10% 0 t d(off) t f switching energy 90% 90% drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% downloaded from: http:///
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